Yeh Ping-Hung

Yeh Ping-Hung

Thanks for your contribution to our group!

Office: IPST
Telephone: N/A
Fax: 404-894-9140
Email: phyeh331@gmail.edu
Mailing Address: IPST building 276Z
Georgia Institute of Technology
500 10th street N.W.
Atlanta, GA 30318-5794
Biosketch | Research Area | Publications | Highlights | Honors

Biosketch

  • Ph.D.:Dept. of Materials Science & Engineering, National Tsing Hua University Hsin-Chu, Taiwan. (09/2002-07/2006),
  • Master :Dept. of Physics, National Sun Yat-Sen University Kaohsiung, Taiwan. (09/2000-06/2002)

Research Area

  • Study and application of nanostructures
  • Biosensor device
  • Using nanodots for nonvolatile memory device

Publications

  1. "Nonvolatile Si/SiO2/SiN/SiO2/Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics," S. C. Chen, T. C. Chang, P. T. Liu, Y. C. Wu, J. Y. Chin, P. H. Yeh, S. M. Sze, C. Y. Chang and C. H. Lien,Appl. Phys. Lett. 91, 193103 (2007).
  2. "Er-doped silicon nanowires with 1.54 ¦Ìm light-emitting and enhanced electrical and field emission properties,"C. T. Huang, C. L. Hsin, K. W. Huang, C. Y. Lee, P. H. Yeh, U. S. Chen and L. J. Chen, Appl. Phys. Lett. 91, 093133 (2007).
  3. "Lateral Self-Aligned p-Type In2O3 Nanowire Arrays Epitaxially Grown on Si Substrates," C. L. Hsin, J. H. He, C. Y. Lee, W. W. Wu, P. H. Yeh, L. J. Chen, and Z. L. Wang, Nano Lett. 7(6), 1799-1803 (2007).
  4. "Nickel nanocrystals with HfO2 blocking oxide for Nonvolatile Memory Application," F. M. Yang, T. C. Chang, P. T. Liu, P. H. Yeh*, U. S. Chen, Y. C. Yu, J. Y. Lin, S. M. Sze and J. C. Lou, Appl. Phys. Lett. 90, 222104 (2007).
  5. "Using Double layer CoSi2 Nanocrystals to Improve the Memory Effects of Nonvolatile Memory Devices," F. M. Yang, T. C. Chang, P. T. Liu, P. H. Yeh*, U. S. Chen, Y. C. Yu, J. Y. Lin, S. M. Sze and J. C. Lou, Appl. Phys. Lett. 90, 212108 (2007).
  6. " Memory characteristics of Co nanocrystals memory device with HfO2 as blocking oxide,"F. M. Yang, T. C. Chang, P. T. Liu, P. H. Yeh*, Y. C. Yu, J. Y.Lin, S. M. Sze and J. C. Lou, Appl. Phys. Lett. 90, 132102 (2007).
  7. "Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels,"S. C. Chen, T. C. Chang, P. T. Liu, Y. C. Wu, P. H. Yeh, C. F. Weng, S. M. Sze, C. Y. Chang and C. H. Lien, Appl. Phys. Lett. 90, 122111, (2007).
  8. "Metal Nanocrystals as Charge Storage Nodes for Nonvolatile Memory Devices," P. H. Yeh, L. J. Chen, P. T. Liu, D. Y. Wang and T. C. Chang, Electrochimica Acta, Vol. 52, Issue 8, 2920-2926, (2007).
  9. "Nonvolatile Memory Devices with NiSi2/CoSi2 Nanocrystals," P. H. Yeh, L. J. Chen, P. T. Liu, D. Y. Wang and T. C. Chang,Journal of Nanoscience and Nanotechnology, 7, 339-343(5), (2007).
  10. "Low power memory device with NiSi2 nanocrystals embedded in silicon dioxide layer," P. H. Yeh, C. H. Yu, L. J. Chen, H. H. Wu, P. T. Liu and T. C. Chang, Appl. Phys. Lett. 87, 193504 (2005).
  11. "Fabrication of NiSi2 Nanocrystals Embedded in SiO2 with Memory Effect by Oxidation of the Amorphous Si/Ni/SiO2 Structure," P. H. Yeh, H. H. Wu, C. H. Yu, L. J. Chen, P. T. Liu, C. H. Hsu and T. C. Chang, J. Vac. Sci. Technol. A 23, 851-855 (2005).
  12. "Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing,"C. H. Yu, P. H. Yeh, L. J. Chen, Nuclear Instruments and Methods in Physics Research Section B, 237, Issue 1-2, 167-173, (2005).
  13. "Metal-induced crystallization of amorphous Si1-xGex by rapid thermal annealing,"C. H. Yu, P. H. Yeh, L. W. Cheng, S. L. Cheng, and L. J. Chen, Thin Solid Films, 469, 356-360 (2004)
  14. "A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage,"D. Z. Peng, T. C. Chang, C. F. Liu, P. H. Yeh, P. T. Liu and C. Y.Chang, Jpn. J. Appl. Phys. 42, 1164-1167, (2003).

Research Highlights

Honors & Awards